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 VSMS3700
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
FEATURES
* Package type: surface mount * Package form: PLCC-2 * Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 * Peak wavelength: p = 950 nm * High reliability * Angle of half intensity: = 60 * Low forward voltage
94 8553
* Suitable for high pulse current operation * Good spectral matching with Si photodetectors * Package matched with IR emitter series VEMT3700 * Floor life: 4 weeks, MSL 2a, acc. J-STD-020 * Lead (Pb)-free reflow soldering
DESCRIPTION
VSMS3700 is an infrared, 950 nm emitting diode in GaAs technology, molded in a PLCC-2 package for surface mounting (SMD).
* Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
* Infrared source in tactile keyboards * IR diode in low space applications * PCB mounted infrared sensors * Emitter in miniature photo-interrupters
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) (deg) 60 P (nm) 950 tr (ns) 800 VSMS3700 4.5 Note Test conditions see table "Basic Characteristics"
ORDERING INFORMATION
ORDERING CODE VSMS3700-GS08 VSMS3700-GS18 Note MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel PACKAGE FORM PLCC-2 PLCC-2
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified acc. figure 11, J-STD-020 J-STD-051, soldered on PCB tp/T = 0.5, tp = 100 s tp = 100 s TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 1.5 170 100 - 40 to + 85 - 40 to + 100 260 250 UNIT V mA mA A mW C C C C K/W
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81373 Rev. 1.2, 04-Sep-08
VSMS3700
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs
180
120 100 80 60
PV - Power Dissipation (mW)
160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100
RthJA = 250 K/W
IF - Forward Current (mA)
RthJA = 250 K/W
40 20 0 0 10 20 30 40 50 60 70 80 90 100
21341
Tamb - Ambient Temperature (C)
21342
Tamb - Ambient Temperature (C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time Virtual source diameter Note Tamb = 25 C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 20 mA IF = 1 A IF = 20 mA IF = 1 A EN 60825-1 TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 s IF = 100 mA, tp = 20 ms IF = 100 mA SYMBOL VF VF TKVF IR Cj Ie Ie e TKe p TKp tr tr tf tf d 1.6 30 4.5 35 15 - 0.8 60 950 50 0.2 800 400 800 400 0.5 8.0 MIN. TYP. 1.3 1.8 - 1.3 100 MAX. 1.7 UNIT V V mV/K A pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns mm
Document Number: 81373 Rev. 1.2, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 323
VSMS3700
Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
BASIC CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
10 000
100
0.01
1000 0.02 0.05 100 0.2 0.5 DC 10 0.1
Ie - Radiant Intensity (mW/sr)
100
tp/T = 0.005
Tamb < 60 C
I F - Forward Current (mA)
10
1
1 0.01
95 9985
0.1
0.1 1 10
100
94 7956
101
102
103
104
t p - Pulse Length (ms)
IF - Forward Current (mA)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Intensity vs. Forward Current
10 4 10 3 10 2 10 1 10 0 10 -1
94 7996
1000
e - Radiant Power (mW)
I F - Forward Current (mA)
100
10
1
0
1
2
3
4
0.1 100
94 8012
101
102
103
104
V F - Forward Voltage (V)
IF - Forward Current (mA)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Radiant Power vs. Forward Current
1.2
VF rel - Relative Forward Voltage (V)
1.6
1.1
IF = 10 mA
Ie rel; e rel
1.2 IF = 20 mA 0.8
1.0 0.9
0.8 0.7
0 20 40 60 80 100
0.4
0 - 10 0 10
94 7993
50
100
140
94 7990
Tamb - Ambient Temperature (C)
T amb - Ambient Temperature (C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
www.vishay.com 324
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81373 Rev. 1.2, 04-Sep-08
VSMS3700
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs
0 Ie rel - Relative Radiant Intensity 10 20 30 - Angular Displacement
1.25 e rel - Relative Radiant Power 1.0
40 1.0 0.9 0.8 0.7 50 60 70 80
0.75 0.5
0.25 IF = 100 mA 0 900 950 1000
0.6
94 8013
0.4
0.2
0
94 7994
- Wavelength (nm)
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
3.5 0.2
1.75 0.1
Pin identification
0.9
Mounting Pad Layout
1.2 area covered with solder resist
2.8 0.15
C
A
2.6 (2.8)
2.2
4 O 2.4 3 + 0.15 1.6 (1.9)
20541
Die Position (for reference only) X = +/- 0.2 mm centrical Y = +/- 0.2 mm centrical Z = 1.13 mm +/- 0.25 mm, from top of die bottom of component
4
Document Number: 81373 Rev. 1.2, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 325
VSMS3700
Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
SOLDER PROFILE
300 250 255 C 240 C 217 C max. 260 C 245 C
3.5 3.1
2.2 2.0
Temperature (C)
200 max. 30 s 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 C/s max. ramp down 6 C/s max. 100 s
5.75 5.25 3.6 3.4
1.85 1.65
4.0 3.6 8.3 7.7
1.6 1.4
4.1 3.9
2.05 1.95
4.1 3.9
0.25
19841
Time (s)
94 8668
Fig. 11 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D
Fig. 13 - Tape Dimensions in mm for PLCC-2
DRYPACK
Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant.
MISSING DEVICES
A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components.
De-reeling direction
FLOOR LIFE
Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020.
94 8158
DRYING
In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 C (+ 5 C), RH < 5 %.
> 160 mm 40 empty compartments min. 75 empty compartments
Tape leader
Carrier leader
Carrier trailer
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape.
Fig. 14 - Beginning and End of Reel
The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape.
Adhesive tape
Blister tape
Component cavity
94 8670
Fig. 12 - Blister Tape
www.vishay.com 326
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81373 Rev. 1.2, 04-Sep-08
VSMS3700
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs
COVER TAPE REMOVAL FORCE
120 10.0 9.0
4.5 3.5 2.5 1.5 Identification Label: Vishay type group tape code production code quantity
13.00 12.75 63.5 60.5
The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180 with regard to the feed direction.
180 178
14.4 max.
94 8665
Fig. 15 - Dimensions of Reel-GS08
120
10.4 8.4
4.5 3.5 2.5 1.5 Identification Label: Vishay type group tape code production code quantity
13.00 12.75 62.5 60.0
321 329
14.4 max.
18857
Fig. 16 - Dimensions of Reel-GS18
Document Number: 81373 Rev. 1.2, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 327
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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